High-dose Co implantation in Si, SiO2/Si and Si3N4/Si Part II : Sputtering yield transients, the approach to high-fluence equilibrium

DSpace Repository

High-dose Co implantation in Si, SiO2/Si and Si3N4/Si Part II : Sputtering yield transients, the approach to high-fluence equilibrium

Overview

Detailed record

dc.contributor.author Zhang, Y en_US
dc.contributor.author Winzell, T
dc.contributor.author Zhang, T
dc.contributor.author Maximov, I A
dc.contributor.author Sarwe, E-L
dc.contributor.author Graczyk, M
dc.contributor.author Montelius , L
dc.contributor.author Whitlow, Harry J
dc.date.accessioned 2004-10-01T07:42:04Z
dc.date.available 2004-10-01T07:42:04Z
dc.date.issued 2003 en_US
dc.identifier.issn 0168-583X en_US
dc.identifier.uri http://hdl.handle.net/2043/585
dc.description.abstract The partial sputtering yields of different species from silicon dioxide/Si and silicon nitride/Si during high-fluence keV Co Metal Vapour Vacuum Arc (MEVVA) irradiation are of importance for both silicide formation and interpretation of sputter profiling. Three sets of samples, nitride/Si(1 0 0), oxide/Si(1 0 0) and oxide/Si(1 1 1), have been bombarded to different normal fluences, , from 1 × 1016 to 2.6 × 1018 ions cm-2. The partial sputtering yields for N and Si in the thick nitride films are ~1.0 and ~0.65, respectively, which indicates that the relative sputtering ratio of N/Si is ~1.5. The partial sputtering yields for O and Si of oxide/Si(1 0 0) samples are determined as ~1.0 and ~0.3, respectively. Although the O and Si sputtering yields from oxide/Si(1 1 1) samples are ~15% higher, the average sputtering ratio of O/Si is ~3.4, the same for both sets of oxide/Si samples. As expected, the partial sputtering yield of Co, YCo(), is small for low fluence implantation and increases with increasing Co fluence. At a normal fluence of ~5 × 1017 ions cm-2, YCo() reaches the high fluence quasi-equilibrium limit, the value is very close to unity. The sputtering yield of Co reduces slightly at even higher fluences, which is associated with erosion of the sample surface. en_US
dc.format.extent 9
dc.language.iso eng en_US
dc.subject Sputtering yield en_US
dc.subject Nitride
dc.subject Oxide
dc.subject Silicon
dc.subject ToF-E ERD
dc.subject High fluence equilibrium
dc.subject Transients
dc.subject.classification Technology en_US
dc.title High-dose Co implantation in Si, SiO2/Si and Si3N4/Si Part II : Sputtering yield transients, the approach to high-fluence equilibrium en_US
dc.type Article, peer reviewed scientific en
dc.relation.url http://dx.doi.org/10.1016/S0168-583X(99)00538-8
dc.contributor.department Malmö University. School of Technology en
dc.subject.srsc 10301 en_US
dc.relation.ispartofpublication Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;3 en_US
dc.relation.ispartofpublicationvolume 159 en_US
dc.format.ePage 141
dc.format.sPage 133
 Find Full text Files for download

There are no files associated with this item.

This item appears in the following Collection(s)

Overview

Search


Browse

My Account

Statistics